Self‐assembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation

摘要

Self-organized InSb dots grown by atomic layer molecular beam epitaxy on InP substrates have\udbeen characterized by atomic force and transmission electron microscopy. Measurement of\udhigh-energy electron diffraction during the growth indicates a Stransky–Krastanov growth mode\udbeyond the onset of 1.4 InSb monolayer ~ML! deposition. The dots obtained after a total deposition\udof 5 and 7 ML of InSb present a truncated pyramidal morphology with rectangular base oriented\udalong the ^110& directions, elongated towards the @110# direction with $111%B lateral facets, with\ud$113%/$114%/$111%A lateral facets in @11\ud¯\ud0# views, and ~001! flat top surfaces. The mismatch between\udthe dot and the substrate has been accommodated by a network of 90° misfit dislocation at the\udinterface. A corrugation of the InP substrate surrounding the dot has been also observed